Physics (Internal)
Theodore Moustakas
Research Interests:
Wide Bandgap Semiconductor Laboratory
My research looks into growth by MBE, MOCVD, HVPE and Gas-cluster Ion beam deposition (GCIB). My lab, the Wide Bandgap Semiconductor Laboratory, has had an esteemed history of innovation. It originally focused on the growth of III-nitrides and the study of its fundamental properties. Many significant discoveries have been made about the basic properties and growth control of III-nitrides. Since its conception, the lab has expanded to include an Eiko MBE, two custom-built hydride vapor phase epitaxy systems (one horizontal and one vertical), a sputter deposition system, an electron beam evaporator, and an inductively coupled plasma reactive ion etching (ICP-RIE) system. More recently, the lab's focus has shifted to the development of III-nitride optoelectronic devices, particularly LEDs and lasers.
Education:
- Ph.D. in Solid State Science and Engineering, Columbia University
- M.Phil. in Solid State Science and Engineering, Columbia University
- B.S. in Physics, Aristotle University, Thessaloniki, Greece
Honors/Awards:
- Honorary Doctoral Degree (Aristotle University, 2003)
- Member - Advisory Board, North American MBE
- Governing Body, Dielectric Science and Technology Division of the Electrochemical Society
- 1997/98 ECE Faculty Award for Excellence in Teaching
- Fellow, American Physical Society
- Fellow, Electrochemical Society
- BU ECE Faculty Award for Excellence in Teaching, 1997-'98