Sang Wan Cho

Sang Wan Cho

Office: PRB, Room 180. 617-353-5980
Email:

 

Research Interests:

My primary area of research are high resolution x-ray emission, resonant inelastic x-ray scattering, and photoemission from organic thin films. Most of my research is undertaken at synchrotron radiation facilities, primarily the National Synchrotron Light Source and the Advanced Light Source. Additionally I am also interested in Density Functional Theory calculation on the organic molecular system and various organic devices (organic thin film transistors, organic light emitting diodes, and organic solar cells).

Selected papers:

  • 12/01/10 Soft x-ray spectroscopic study of the ferromagnetic insulator V{_0.82}Cr{_0.18}O{_2}
  • 02/10/10 Electronic structure of N,N'-ethylene-bis(1,1,1-trifluoropentane-2,4-dioneiminato)-copper(II) (Cu-TFAC), from soft X-ray spectroscopies and density functional theory calculations
  • 01/11/10 Electronic structure of C60/Phthalocyanine/ITO interfaces studied using soft x-ray spectroscopies
  • 01/06/10 Soft x-ray spectroscopy study of the element and orbital contributions to the electronic structure of copper hexadecafluoro-phthalocyanine
  • 07/28/09 Changes in the structure of an atomic-layer-deposited HfO2 film on a GaAs (100) substrate as a function of postannealing temperature
  • 03/05/09 The interface state assisted charge transport at the MoO3/metal interface
  • 11/10/08 Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate
  • 08/01/08 The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N-bis(1-naphthyl)-N,N-diphenyl-1,1-biphenyl- 4,4-diamine interfaces
  • 05/27/08 The characteristics and interfacial electronic structures of organic thin film transistor devices with ultrathin (HfO2)x(SiO2)1−x gate dielectrics

Education:

Ph.D. in Institute of Physics and Applied Physics, Yonsei University, Korea 2008.

M.S. in Institute of Physics and Applied Physics, Yonsei University, Korea 2002.

B.A. in Institute of Physics and Applied Physics, Yonsei University, Korea 2000.