Interfacial reaction of atomic-layer-deposited HfO2 film as a function of the surface state of an n-GaAs (100) substrate
Journal Article

Published: Monday, November 10, 2008
Citation: Applied Physics Letters, Volume 93, Number 19, Pages 192902
AIP Permalink: http://link.aip.org/link/?APPLAB/93/192902/1

Authors (1 total): S. Cho

Abstract: The characteristics of interfacial reactions and the valence band offset of HfO2 films grown on GaAs by atomic layer deposition were investigated by combining high-resolution x-ray photoelectron spectroscopy and high-resolution electron transmission microscopy. The interfacial characteristics are significantly dependent on the surface state of the GaAs substrate. Polycrystalline HfO2 film on a clean GaAs surface was changed to a well-ordered crystalline film as the annealing temperature increased, and a clean interface with no interfacial layer formed at temperatures above 600 °C. The valence band offset of the film grown on the oxidized GaAs surface gradually increased with the stoichiometric change in the interfacial layer.