Photocurrent diffusion length in disordered GaN
Journal Article

Published: Saturday, March 24, 2007
Journal: Journal of Materials Science: Materials in Electronics, Volume 18, Pages 197

Authors (1 total): A. Preston

Abstract: The diffusion length of carriers in semiconductors is a significant parameter determining the suitability of a material for device applications. Here we describe a simple new technique to measure diffusion length and apply it to a study of two types of disordered GaN. We find the diffusion length to be of the order of microns in nanocrystalline GaN and hundreds of microns in amorphous GaON. Experimentally the method involves the defocussing of a laser spot between two contacts. The results are supported by numerical modelling of the carrier concentrations in the experiment.

  • DOI: 10.1007/s10854-007-9160-5