Biaxial Strain in Graphene Adhered to Shallow Depressions
Journal Article

Published: Sunday, March 21, 2010
Journal: ACS Nanoletters, Volume 10, Pages 6-10
AIP Permalink: http://ultra.bu.edu/papers/metzger-nl-2010.pdf

Authors (1 total): B. Goldberg

Abstract: Measurements on graphene exfoliated over a substrate prepatterned with shallow depressions demonstrate that graphene does not remain free-standing but instead adheres to the substrate despite the induced biaxial strain. The strain is homogeneous over the depression bottom as determined by Raman measurements. We find higher Raman shifts and Gru ̈ neisen parameters of the phonons underlying the G and 2D bands under biaxial strain than previously reported. Interference modeling is used to determine the vertical position of the graphene and to calculate the optimum dielectric substrate stack for maximum Raman signal.