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VERSION:2.0
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CALSCALE:GREGORIAN
METHOD:PUBLISH
BEGIN:VEVENT
DTSTAMP:20260912T122607Z
LAST-MODIFIED:20121116T203436Z
DTSTART:20061201T170000Z
DTEND:20061201T190000Z
UID:event51@bu.edu
URL:http://physics.bu.edu/internal/events/show/51
SUMMARY:Indium Nitride: The Extreme III-V Semiconductor Material
DESCRIPTION:Featuring Chris McConville\, Department of Physics\, University
	 of Warwick\nHosted by: Kevin Smith\n\nPart of the Biophysics/Condensed Mat
	ter Seminar Series.\n\nSince it was discovered in 2002 that InN was in fact
	 a narrow-gap semiconductor material (Egap ~0.65 eV and not 1.89 eV as
	 previously thought)\, interest in the properties of this material has incr
	eased dramatically.  However\, the physical and electronic structure of InN
	 surfaces and interfaces (and the In-rich InGaN alloys)\, are difficult to 
	determine due to problems in preparing clean surfaces following growth by p
	lasma-assisted MBE or MOCVD.  We have used in-situ atomic hydrogen cleaning
	 to prepare clean\, damage-free InN surfaces for study using a range of exp
	erimental techniques; high-resolution electron-energy-loss spectroscopy (HR
	EELS)\, scanning tunnelling spectroscopy (STS) and photoelectron spectrosco
	py (PES) have been used to study the electronic and chemical properties of 
	the InN(0001) surface.   One of the most prominent properties of the native
	 InN surface is the existence of electron accumulation\, with a significant
	ly higher electron density than observed in any other III-V semiconductor m
	aterial (~ 2.5 × 10E13 cm-2).  The existence of electron accumulation
	 has been demonstrated by a wide range of techniques\, allowing a broad and
	 consistent set of surface space-charge properties to emerge.  The unusual 
	band structure property of InN responsible for this is that the conduction 
	band minimum at the gamma-point is located well below the average mid-gap e
	nergy.  This means that the surface Fermi level simultaneously lies close t
	o the average mid-gap energy and high in the conduction band.  The results 
	leading to this conclusion will be discussed in the talk.
LOCATION:SCI 352\, 590 Commonwealth Avenue\, 02215
STATUS:CONFIRMED
CLASS:PUBLIC
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