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VERSION:2.0
PRODID:-//RLASKEY//CALENDEROUS//EN
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BEGIN:VEVENT
DTSTAMP:20261018T010033Z
LAST-MODIFIED:20191010T145656Z
DTSTART:20191016T193000Z
DTEND:20191016T203000Z
UID:event2196@bu.edu
URL:http://physics.bu.edu/internal/events/show/2196
SUMMARY:High temperature superconductivity in semiconductor artificial grap
	hene
DESCRIPTION:Featuring Julian Ingham\, Boston University\, Physics Departmen
	t\n\nPart of the Condensed Matter Theory Seminar Series.\n\nSemiconductor a
	rtificial graphene (AG) seeks to replicate the properties of graphene\, by 
	subjecting a two-dimensional electron gas to a periodic potential with the 
	same symmetries as the atomic lattice in graphene. In this talk I will expl
	ain how this material can realise a new mechanism for high temperature supe
	rconductivity — due to the antiscreened fluctuations of the emergent pseu
	dospin degree of freedom. The mechanism originates solely from the repulsiv
	e Coulomb interaction\, and relies on the Dirac dispersion and a strong per
	iodic potential — and could therefore in principle be realised in other D
	irac materials. The ability to artificially tune the lattice spacing\, pote
	ntial strength and density in AG allows this regime to be engineered\, and 
	the calculations I present show that Tc can be order 25 K for realistic exp
	erimental parameters.
LOCATION:SCI 328\, 590 Commonwealth Avenue\, 02215
STATUS:CONFIRMED
CLASS:PUBLIC
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