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BEGIN:VEVENT
DTSTAMP:20260914T192655Z
LAST-MODIFIED:20141014T164711Z
DTSTART:20141024T160000Z
DTEND:20141024T170000Z
UID:event1339@bu.edu
URL:http://physics.bu.edu/internal/events/show/1339
SUMMARY:Strain engineering Dirac surface states in topological crystalline 
	insulator heteroepitaxial thin films
DESCRIPTION:Featuring Dr. Ilija Zelikovic\, Boston College\nHosted by: Clau
	dio Chamon\, Michael El-Batanouny\n\nPart of the Biophysics/Condensed Matte
	r Seminar Series.\n\nAbstract:\nControllable manipulation of materials at t
	he atomic length scales is necessary for realizing the next generation of n
	anodevices. A promising pathway involves the application of strain\, which 
	can be used to tune the inter-atomic lattice spacing and induce an accompan
	ying change in the electronic structure. In newly discovered topological cr
	ystalline insulators (TCIs)\, the unique crystalline protection of the surf
	ace state (SS) band structure has led to a series of intriguing predictions
	 of strain generated phenomena\, from the appearance of pseudo-magnetic fie
	lds and helical flat bands\, to the tunability of the SS Dirac nodes (Tang 
	and Fu\, arXiv:1403.7523). However\, practical realization of this exotic p
	henomenology via strain engineering is experimentally challenging and is ye
	t to be achieved. In our experiments\, we grow heteroepitaxial thin films o
	f SnTe and use Fourier-transform scanning tunneling microscopy (STM) to stu
	dy the effects of strain on the interference patterns of scattered electron
	s. We find that strain continuously tunes the momentum space position of th
	e Dirac points\, consistent with theoretical predictions. Our measurements 
	provide the first direct experimental evidence for the pronounced effects o
	f strain on the topological SS band structure\, and demonstrate the fundame
	ntal mechanism necessary for using TCIs in strain-based applications.
LOCATION:SCI 352\, 590 Commonwealth Avenue\, 02215
STATUS:CONFIRMED
CLASS:PUBLIC
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